Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms
- Department of Physics, Ilse Katz Center for Meso and Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O. Box 653, Beer-Sheva 84105 (Israel)
We have used spatially and temporally resolved cathodoluminescence (CL) to study the carrier recombination dynamics of InGaN quantum wells (QWs) grown on (0001)-oriented planar GaN and (1101)-oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and composition were examined. We employed a variable temperature time-resolved CL imaging approach that enables a spatial correlation between regions of enhanced exciton localization, luminescence efficiency, and radiative lifetime with the aim of distinguishing between excitons localized in In-rich quantum dots and those in the surrounding Ga-rich QW regions.
- OSTI ID:
- 21064427
- Journal Information:
- Journal of Applied Physics, Vol. 102, Issue 9; Other Information: DOI: 10.1063/1.2802291; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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