Enhancement of exchange bias and training effect in ion-beam sputtered Fe{sub 46}Mn{sub 54}/Ni{sub 81}Fe{sub 19} bilayers
- Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
- Callaghan Innovation, PO Box 31310, Lower Hutt 5040 (New Zealand)
We present a remarkable enhancement by 300% of the exchange-bias field at room temperature, without affecting the coercivity value, via optimum magnetic annealing (250 °C/3 kOe) in ion-beam sputtered FeMn(30 nm)/NiFe(10 nm) bilayers. This specific behavior has been attributed to a higher degree of γ-FeMn(111) orientation that offers more interfacial FeMn moments to get pinned with the moments of the adjacent NiFe layer. Unlike the absence of training effect at room temperature, a pronounced training effect and an accompanying magnetization reversal asymmetry are evidenced upon field cooling below 50 K due to the presence of biaxial exchange induced anisotropy across the interdiffused FeMn/NiFe interface. The present findings not only have technological significance but also are of relevance to the understanding of interfacial spin disorder and frustration in these exchange-biased systems.
- OSTI ID:
- 22275654
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spin-Coating and Characterization of Multiferroic MFe{sub 2}O{sub 4} (M=Co, Ni) / BaTiO{sub 3} Bilayers
Exchange bias in NiFe/FeMn/NiFe trilayers