1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure
Journal Article
·
· Journal of Applied Physics
- Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation)
- Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany)
- The NNSU Physical-Technical Research Institute, Nizhny Novgorod 603950 (Russian Federation)
In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3 μm at room temperature. We attribute this peak to the direct band gap transitions between Γ-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.
- OSTI ID:
- 22275638
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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