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Title: 1.3 μm photoluminescence of Ge/GaAs multi-quantum-well structure

In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3 μm at room temperature. We attribute this peak to the direct band gap transitions between Γ-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [4] ;  [5]
  1. Institute for Physics of Microstructures of the Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation)
  2. (NNSU), Nizhny Novgorod 603950 (Russian Federation)
  3. (Saale) D-06120 (Germany)
  4. Max Planck Institute of Microstructure Physics, Weinberg 2, Halle (Saale) D-06120 (Germany)
  5. The NNSU Physical-Technical Research Institute, Nizhny Novgorod 603950 (Russian Federation)
Publication Date:
OSTI Identifier:
22275638
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRONIC STRUCTURE; ELECTRONS; ENERGY GAP; GALLIUM ARSENIDES; GERMANIUM; HETEROJUNCTIONS; HOLES; LASER RADIATION; PHOTOLUMINESCENCE; QUANTUM WELLS; SPUTTERING; TEMPERATURE RANGE 0273-0400 K; VALENCE