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Title: Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures

The optimization of heavily strained Ga{sub 0.25}In{sub 0.75}As/Al{sub 0.48}In{sub 0.52}As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm{sup 2}/Vs and 70 000 cm{sup 2}/Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10{sup 12} cm{sup −2} throughout the entire study.
Authors:
; ; ; ;  [1]
  1. Millimeter-Wave-Electronics Group, ETH Zurich, 8092 Zurich (Switzerland)
Publication Date:
OSTI Identifier:
22275612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; CARRIER DENSITY; CHARGE CARRIERS; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM COMPOUNDS; INDIUM ARSENIDES; INTERFACES; LAYERS; OPTIMIZATION; STRAINS; TRANSISTORS