Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures
Journal Article
·
· Journal of Applied Physics
The optimization of heavily strained Ga{sub 0.25}In{sub 0.75}As/Al{sub 0.48}In{sub 0.52}As high electron mobility transistor structures is discussed in detail. The growth parameters and the channel layer interfaces were optimized in order to maximize the mobility of the two-dimensional electron gas. Structures composed of an 11 nm thick channel layer and a 4 nm thick spacer layer exhibited electron mobilities as high as 15 100 cm{sup 2}/Vs and 70 000 cm{sup 2}/Vs at 300 and 77 K, respectively, for channels including InAs strained layers. The sheet carrier density was kept above 2.5 × 10{sup 12} cm{sup −2} throughout the entire study.
- OSTI ID:
- 22275612
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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