skip to main content

SciTech ConnectSciTech Connect

Title: Spin injection and diffusion in silicon based devices from a space charge layer

We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and found substantial differences in the spin transport behavior. The criteria determining the maximum spin current are investigated. The physical reason behind the transport behavior is explained.
Authors:
; ; ;  [1]
  1. Institute for Microelectronics, TU Wien, Gußhausstraße 27–29/E360, A–1040 Wien (Austria)
Publication Date:
OSTI Identifier:
22273928
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; DEPLETION LAYER; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; N-TYPE CONDUCTORS; SILICON; SPIN