Simulation of near-surface proton-stimulated diffusion of boron in silicon
- St. Petersburg State Electrotechnical University LETI (Russian Federation)
- St. Petersburg State Polytechnical University (Russian Federation)
A quantitative model for near-surface redistribution of doping impurity in silicon in the course of proton-stimulated diffusion is developed for the first time. According to the model, the near-surface peak of the impurity concentration is caused by migration of neutral impurity-self-interstitial pairs to the surface with subsequent decomposition of these pairs and accumulation of the impurity at the silicon surface within a thin layer (referred to as {delta}-doped layer). The depletion and enhancement regions that are found deeper than the near-surface concentration peak are caused by expulsion of ionized impurity by an electric field from the near-surface region of the field penetration. The field appears due to the charge formed in the natural-oxide film at the silicon surface as a result of irradiation with protons. The diffusion-kinetic equations for the impurity, self-interstitials, vacancies, and impurity-self-interstitial pairs were solved numerically simultaneously with the Poisson equation. It is shown that the results of calculations are in quantitative agreement with experimental data on the proton-stimulated diffusion of boron impurity in the near-surface region of silicon.
- OSTI ID:
- 22004920
- Journal Information:
- Semiconductors, Vol. 42, Issue 3; Other Information: Copyright (c) 2008 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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