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Title: Structural effects of field emission from GaN nanofilms on SiC substrates

GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9–38 nm, thickness of 10–50 nm, and roughness of 0.22–13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/μm at a current density of 1 μA/cm{sup 2}, with a current density of up to 1.1 mA/cm{sup 2} at a field of 4.18 V/μm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. College of Materials Science and Engineering, Beijing University of Technology, 100 Pingleyuan, Chaoyang District, Beijing 100124 (China)
  2. Department of Physics Tsinghua University, Tsinghua-Foxconn Nanotechnology Research Center, Beijing 100084 (China)
  3. College of Chemistry and Chemical Engineering, Chongqing University of Technology, Chongqing 400054 (China)
Publication Date:
OSTI Identifier:
22273557
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ENERGY BEAM DEPOSITION; FIELD EMISSION; GALLIUM NITRIDES; LASER RADIATION; NANOSTRUCTURES; PARTICLES; PULSED IRRADIATION; ROUGHNESS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDES; STRESSES; SUBSTRATES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY