Intersubband transitions in In{sub x}Ga{sub 1−x}N/In{sub y}Ga{sub 1−y}N/GaN staggered quantum wells
- Department of Occupational Health and Safety, School of Health, Karabuk University, Karabuk 78050 (Turkey)
- Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus, Eskisehir 26470 (Turkey)
Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.
- OSTI ID:
- 22273526
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CONCENTRATION RATIO
DEPOLARIZATION
ELECTRIC FIELDS
EXCITONS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
LAYERS
MANY-BODY PROBLEM
NONLINEAR PROBLEMS
OSCILLATOR STRENGTHS
POISSON EQUATION
QUANTUM WELLS
SURFACES
YTTRIUM NITRIDES