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Title: Intersubband transitions in In{sub x}Ga{sub 1−x}N/In{sub y}Ga{sub 1−y}N/GaN staggered quantum wells

Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.
Authors:
 [1] ;  [2]
  1. Department of Occupational Health and Safety, School of Health, Karabuk University, Karabuk 78050 (Turkey)
  2. Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus, Eskisehir 26470 (Turkey)
Publication Date:
OSTI Identifier:
22273526
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CONCENTRATION RATIO; DEPOLARIZATION; ELECTRIC FIELDS; EXCITONS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LAYERS; MANY-BODY PROBLEM; NONLINEAR PROBLEMS; OSCILLATOR STRENGTHS; POISSON EQUATION; QUANTUM WELLS; SURFACES; YTTRIUM NITRIDES