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Title: Spin relaxation time dependence on optical pumping intensity in GaAs:Mn

We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10{sup 17} cm{sup −3}. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.
Authors:
 [1] ;  [2]
  1. Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112-0830 (United States)
  2. Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, Nebraska 68588-0299 (United States)
Publication Date:
OSTI Identifier:
22273491
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANALYTICAL SOLUTION; APPROXIMATIONS; CHARGE CARRIERS; CONCENTRATION RATIO; ELECTRONS; EXCITATION; GALLIUM ARSENIDES; KINETIC EQUATIONS; MAGNETIC SEMICONDUCTORS; OPTICAL PUMPING; RELAXATION TIME; SPIN