Spin relaxation time dependence on optical pumping intensity in GaAs:Mn
Journal Article
·
· Journal of Applied Physics
- Department of Physics and Astronomy, University of Utah, 115 South 1400 East, Salt Lake City, Utah 84112-0830 (United States)
- Department of Physics and Astronomy, Nebraska Center for Materials and Nanoscience, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska, P.O. Box 880299, Lincoln, Nebraska 68588-0299 (United States)
We analyze the dependence of electron spin relaxation time on optical pumping intensity in a partially compensated acceptor semiconductor GaAs:Mn using analytic solutions for the kinetic equations of the charge carrier concentrations. Our results are applied to previous experimental data of spin-relaxation time vs. excitation power for magnetic concentrations of approximately 10{sup 17} cm{sup −3}. The agreement of our analytic solutions with the experimental data supports the mechanism of the earlier-reported atypically long electron-spin relaxation time in the magnetic semiconductor.
- OSTI ID:
- 22273491
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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