Local elastic modulus of RF sputtered HfO{sub 2} thin film by atomic force acoustic microscopy

Journal Article · Thu Apr 24 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4872783· OSTI ID:22271046

Thakur, S.; Sahoo, N. K. ^[1]; Misal, J. S.; Rao, K. D. ^[2]

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1. Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400 085 (India)
2. Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam-530 012 (India)

Atomic force acoustic microscopy (AFAM) is a useful nondestructive technique for measurement of local elastic modulus of materials at nano-scale spatial resolution by measuring the contact resonance spectra for higher order modes of the AFM cantilever. The elastic modulus of RF sputtered HfO{sub 2} thin film has been measured quantitatively, using reference approach in which measurements are performed on the test and reference samples. Using AFAM, the measured elastic modulus of the HfO{sub 2} thin film is 223±27 GPa, which is in agreement with the literature value of 220±40 GPa for atomic layer deposited HfO{sub 2} thin film using nanoindentation technique.

• OSTI ID: 22271046
• Journal Information: AIP Conference Proceedings, Vol. 1591, Issue 1; Conference: 58. DAE solid state physics symposium 2013, Patiala, Punjab (India), 17-21 Dec 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACOUSTIC MICROSCOPY
ATOMIC FORCE MICROSCOPY
DEPOSITION
ELASTICITY
HAFNIUM OXIDES
LAYERS
PRESSURE RANGE GIGA PA
SPATIAL RESOLUTION
SPUTTERING
THIN FILMS
YOUNG MODULUS