Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875027· OSTI ID:22267726

Lee, Chao-Kuei ^[1]; Lin, Yuan-Yao ^[2]; Lin, Sung-Hui ^[3]; Lin, Gong-Ru ^[4]; Pan, Ci-Ling ^[3]

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1. Department of Photonics, National Sun-Yat-Sen University, Kaohsiung 80400, Taiwan (China)
2. Department of Electrical Engineering, Institute of Photonics Technologies, National Tsing Hua University, Hsinchu 30010, Taiwan (China)
3. Department of Photonics, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
4. Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan (China)

Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations.

• OSTI ID: 22267726
• Journal Information: Applied Physics Letters, Vol. 104, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
RELAXATION TIME