HRTEM and XPS study of nanoparticle formation in Zn{sup +} ion implanted Si

Journal Article · Fri Feb 21 00:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4865615· OSTI ID:22263672

Privezentsev, Vladimir V. ^[1]; Tabachkova, Natalya Yu. ^[2]; Lebedinskii, Yurii Yu. ^[3]

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1. Institute of Physics and Technology of the RAS, Nakhimovskiy prosp.34, 117218 Moscow (Russian Federation)
2. National University of Science and Technology ''MISiS'', Leninskiy prosp. 4, 119049 Moscow (Russian Federation)
3. National Research Nuclear University ''MIPhI'', Kashirskoe sh. 31, 115409 Moscow (Russian Federation)

The results of investigations of nanoparticles (NPs) formation in a near surface layer of Si substrate after {sup 64}Zn{sup +} ion implantation and thermal annealing are presented. The implantation energy and dose were correspondently E=100keV and D = 2×10{sup 16} cm{sup −2}. Than the samples were subsequently isochronously subjected to furnace annealing during 1h in neutral atmosphere at 400°C and in oxygen atmosphere at 600, 700 and 800°C. The visualization of near surface layer was carried out by transmission electron microscopy with addition of electron diffraction. The energy dispersive spectroscopy was used for value of impurity concentration. The charge state of implanted zinc, silicon matrix atom and oxygen and were carried out by X-ray photoelectron spectroscopy and Auger electron spectroscopy.

• OSTI ID: 22263672
• Journal Information: AIP Conference Proceedings, Vol. 1583, Issue 1; Conference: ICDS-2013: 27. international conference on defects in semiconductors, Bologna (Italy), 21-26 Jul 2013; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ANNEALING
AUGER ELECTRON SPECTROSCOPY
CHARGE STATES
ELECTRON DIFFRACTION
IMPURITIES
ION IMPLANTATION
LAYERS
NANOSTRUCTURES
OXYGEN
SILICON
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC
ZINC 64
ZINC IONS