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Title: Distributed feedback GaSb based laser diodes with buried grating

We report on the growth, fabrication, and experimental study of distributed feed-back antimonide diode lasers with buried grating. A second order index-coupled grating was defined by interferometric lithography on the top of the laser waveguide and dry etched by reactive ion etching. The grating was then buried thanks to an overgrowth of the top cladding layer using molecular beam epitaxy. The wafer was then processed using standard photolithography and wet etching into 15 μm-wide laser ridges. Single frequency laser emission at a wavelength of 2.2 μm was measured with a side mode suppression ratio of 34 dB, a maximum output power of 30 mW, and a total continuous tuning range of 6.5 nm.
Authors:
; ; ;  [1]
  1. IES, UMR CNRS 5214, CC067, Université Montpellier 2, Place Eugene Bataillon, 34095 Montpellier Cedex 05 (France)
Publication Date:
OSTI Identifier:
22262551
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GALLIUM ANTIMONIDES; GRATINGS; LASERS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY