Direct observation of nanometer-scale strain field around CoSi{sub 2}/Si interface using scanning moiré fringe imaging

Journal Article · Mon Apr 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4873393· OSTI ID:22262543

Kim, Suhyun; Jung, Younheum; Jung Kim, Joong; Byun, Gwangseon; Lee, Sunyoung ^[1]; Lee, Heabum ^[2]

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1. Memory Analysis Science and Engineering Group, Samsung Electronics, San 16, Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)
2. Yield Enhancement, Samsung Electronics, San 16, Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)

We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi{sub 2} contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi{sub 2}/Si (111) interface was determined from the high-resolution (HR)-STEM images, and the strain field formed around the S/D region was revealed by nanometer-scale SMFs appearing in the STEM image. In addition, we showed that the strain field in the S/D region measured by SMF imaging agreed with results obtained via peak-pairs analysis of HR-STEM images.

• OSTI ID: 22262543
• Journal Information: Applied Physics Letters, Vol. 104, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT SILICIDES
NANOSTRUCTURES
STRAINS
TRANSISTORS
TRANSMISSION ELECTRON MICROSCOPY