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Title: Direct observation of nanometer-scale strain field around CoSi{sub 2}/Si interface using scanning moiré fringe imaging

We report the use of scanning moiré fringe (SMF) imaging through high-angle annular dark-field scanning transmission electron microscopy (STEM) to measure the strain field around a CoSi{sub 2} contact embedded in the source and drain (S/D) region of a transistor. The atomic arrangement of the CoSi{sub 2}/Si (111) interface was determined from the high-resolution (HR)-STEM images, and the strain field formed around the S/D region was revealed by nanometer-scale SMFs appearing in the STEM image. In addition, we showed that the strain field in the S/D region measured by SMF imaging agreed with results obtained via peak-pairs analysis of HR-STEM images.
Authors:
; ; ; ;  [1] ;  [2]
  1. Memory Analysis Science and Engineering Group, Samsung Electronics, San 16, Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)
  2. Yield Enhancement, Samsung Electronics, San 16, Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22262543
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT SILICIDES; NANOSTRUCTURES; STRAINS; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY