Reproducible strain measurement in electronic devices by applying integer multiple to scanning grating in scanning moiré fringe imaging

Journal Article · Wed Oct 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4897379· OSTI ID:22299611

Kim, Suhyun; Jung, Younheum; Kim, Joong Jung; Lee, Sunyoung; Lee, Haebum ^[1]; Kondo, Yukihito ^[2]

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1. Memory Analysis Science and Engineering Group, Samsung Electronics, San #16 Hwasung-city, Gyeonggi-Do 445-701 (Korea, Republic of)
2. EM Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558 (Japan)

Scanning moiré fringe (SMF) imaging by high-angle annular dark field scanning transmission electron microscopy was used to measure the strain field in the channel of a transistor with a CoSi{sub 2} source and drain. Nanometer-scale SMFs were formed with a scanning grating size of d{sub s} at integer multiples of the Si crystal lattice spacing d{sub l} (d{sub s} ∼ nd{sub l}, n = 2, 3, 4, 5). The moiré fringe formula was modified to establish a method for quantifying strain measurement. We showed that strain fields in a transistor measured by SMF images were reproducible with an accuracy of 0.02%.

• OSTI ID: 22299611
• Journal Information: AIP Advances, Vol. 4, Issue 10; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
COBALT SILICIDES
CRYSTAL LATTICES
ELECTRONIC EQUIPMENT
STRAINS
TRANSMISSION ELECTRON MICROSCOPY