Homojunction p-n photodiodes based on As-doped single ZnO nanowire
Journal Article
·
· AIP Conference Proceedings
- Quantum-Functional Semiconductor Research Center, Dongguk Univ.-Seoul, Seoul 100-715 (Korea, Republic of)
- Nano-materials Lab. National Nanofab Center at KAIST, 335 Gwahangno, Daejeon 305-806 (Korea, Republic of)
- Department of Engineering Physics, Air Force Institute of Technology,Wright-Patterson AFB, OH 45433 (United States)
Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.
- OSTI ID:
- 22261921
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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