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Title: Homojunction p-n photodiodes based on As-doped single ZnO nanowire

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Quantum-Functional Semiconductor Research Center, Dongguk Univ.-Seoul, Seoul 100-715 (Korea, Republic of)
  2. Nano-materials Lab. National Nanofab Center at KAIST, 335 Gwahangno, Daejeon 305-806 (Korea, Republic of)
  3. Department of Engineering Physics, Air Force Institute of Technology,Wright-Patterson AFB, OH 45433 (United States)
Publication Date:
OSTI Identifier:
22261921
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ARSENIC; DOPED MATERIALS; PHOTODIODES; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECT; ZINC OXIDES