Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection
- Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, California 92521 (United States)
ZnO-based p-n homojunctions were grown using molecular-beam epitaxy. Sb and Ga were used as dopants to achieve the p-type and n-type ZnO, respectively. The mesa devices were fabricated by employing wet etching and standard photolithography techniques. Al/Ti metal was deposited by electron-beam evaporation and annealed to form Ohmic contacts. Current-voltage measurements of the device showed good rectifying behavior, from which a turn-on voltage of about 2 V was obtained. Very good response to ultraviolet light illumination was observed from photocurrent measurements.
- OSTI ID:
- 20778754
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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