Homojunction p-n photodiodes based on As-doped single ZnO nanowire

Journal Article · Wed Dec 04 04:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848280· OSTI ID:22261921

Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W. ^[1]; Ahn, C. W. ^[2]; Yeo, Y. K. ^[3]

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1. Quantum-Functional Semiconductor Research Center, Dongguk Univ.-Seoul, Seoul 100-715 (Korea, Republic of)
2. Nano-materials Lab. National Nanofab Center at KAIST, 335 Gwahangno, Daejeon 305-806 (Korea, Republic of)
3. Department of Engineering Physics, Air Force Institute of Technology,Wright-Patterson AFB, OH 45433 (United States)

Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices.

• OSTI ID: 22261921
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1566; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC
DOPED MATERIALS
PHOTODIODES
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
ZINC OXIDES