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Title: Electron transfer and capture dynamics in ZnSe quantum wells grown on GaAs

We investigate the transfer and capture dynamics of electrons in phase coherent photorefractive ZnSe quantum wells grown on GaAs using degenerate three-beam four-wave-mixing. The measurements reveal electron capture times by the quantum well in the order of several tens of picoseconds and a transit time of approximately 5 picoseconds from the GaAs substrate through the ZnMgSe barrier.
Authors:
;  [1]
  1. Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221 (United States)
Publication Date:
OSTI Identifier:
22261905
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON CAPTURE; ELECTRON TRANSFER; ELECTRONS; GALLIUM ARSENIDES; QUANTUM WELLS; SUBSTRATES; ZINC SELENIDES