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Title: CdS/PbSe heterojunction for high temperature mid-infrared photovoltaic detector applications

n-CdS/p-PbSe heterojunction is investigated. A thin CdS film is deposited by chemical bath deposition on top of epitaxial PbSe film by molecular beam epitaxy on Silicon. Current-voltage measurements demonstrate very good junction characteristics with rectifying ratio of ∼178 and ideality factor of 1.79 at 300 K. Detectors made with such structure exhibit mid-infrared spectral photoresponse at room temperature. The peak responsivity R{sub λ} and specific detectivity D{sup *} are 0.055 A/W and 5.482 × 10{sup 8} cm·Hz{sup 1/2}/W at λ = 4.7 μm under zero-bias photovoltaic mode. Temperature-dependent photoresponse measurements show abnormal intensity variation below ∼200 K. Possible reasons for this phenomenon are also discussed.
Authors:
; ; ;  [1] ;  [1] ;  [2]
  1. The School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22258581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CADMIUM SULFIDES; HETEROJUNCTIONS; LEAD SELENIDES; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECT; TEMPERATURE DEPENDENCE; THIN FILMS