skip to main content

SciTech ConnectSciTech Connect

Title: Magnetoresistance and electron-hole exchange interaction in (Co{sub 1-x}In{sub x}){sub 2}O{sub 3-v} concentrated ferromagnetic semiconductors

Systematic studies of electrical transport properties of (Co{sub 1-x}In{sub x}){sub 2}O{sub 3-v} concentrated ferromagnetic semiconductors were performed. Quantitative analysis demonstrated that spin dependent variable range hopping dominated the low temperature transport behavior. Moreover, it was found that ferromagnetic or antiferromagnetic coupling of electron-hole pair generated during the variable range hopping process is responsible for the negative or positive magnetoresistance, respectively. Our results not only illustrate the connection between magnetoresistance and electron-hole exchange interaction but also provide a unique method to detect the exchange interaction of electron-hole pair.
Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
Publication Date:
OSTI Identifier:
22254057
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIFERROMAGNETISM; EXCHANGE INTERACTIONS; MAGNETORESISTANCE; SPIN