Magnetoresistance and electron-hole exchange interaction in (Co{sub 1-x}In{sub x}){sub 2}O{sub 3-v} concentrated ferromagnetic semiconductors

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4831689· OSTI ID:22254057

Xu, T. S.; Qiao, R. M.; Tian, Y. F.; Zhang, K.; Cao, Y. L.; Kang, S. S.; Chen, Y. X.; Liu, G. L.; Mei, L. M. ^[1]

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1. School of Physics, National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)

Systematic studies of electrical transport properties of (Co{sub 1-x}In{sub x}){sub 2}O{sub 3-v} concentrated ferromagnetic semiconductors were performed. Quantitative analysis demonstrated that spin dependent variable range hopping dominated the low temperature transport behavior. Moreover, it was found that ferromagnetic or antiferromagnetic coupling of electron-hole pair generated during the variable range hopping process is responsible for the negative or positive magnetoresistance, respectively. Our results not only illustrate the connection between magnetoresistance and electron-hole exchange interaction but also provide a unique method to detect the exchange interaction of electron-hole pair.

• OSTI ID: 22254057
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
EXCHANGE INTERACTIONS
MAGNETORESISTANCE
SPIN