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Title: SU-8 doped and encapsulated n-type graphene nanomesh with high air stability

N-type doping of graphene with long-term chemical stability in air represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method to achieve highly stable n-type graphene nanomeshes, in which the SU-8 photoresist simultaneously serves as an effective electron dopant and an excellent encapsulating layer. The chemically stable n-type characteristics of the SU-8 doped graphene were evaluated in air using their Raman spectra, electrical transport properties, and electronic band structures. The SU-8 doping does minimum damage to the hexagonal carbon lattice of graphene and is completely reversible by removing the uncrosslinked SU-8 resist.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824 (United States)
  2. (Iraq)
Publication Date:
OSTI Identifier:
22253878
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 23; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AIR; DOPED MATERIALS; ELECTRONS; GRAPHENE; RAMAN SPECTRA; STABILITY