Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium

Saraswat, Vivek; Way, Austin J.; Zheng, Xiaoqi; Jacobberger, Robert M.; Manzo, Sebastian; Tiwale, Nikhil; Dwyer, Jonathan H.; Kawasaki, Jason K.; Nam, Chang-Yong; Gopalan, Padma; Arnold, Michael S.

doi:10.1063/5.0134756

Title: Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium

Journal Article · Thu Apr 13 00:00:00 EDT 2023 · APL Materials

DOI:https://doi.org/10.1063/5.0134756· OSTI ID:1989629

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^[1]; Zheng, Xiaoqi ^[1];

^[1]; Manzo, Sebastian ^[1];

^[2]; Dwyer, Jonathan H. ^[1];

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University of Wisconsin−Madison, WI (United States)
Brookhaven National Laboratory (BNL), Upton, NY (United States)

The synthesis of functional graphene nanostructures on Ge(001) provides an attractive route toward integrating graphene-based electronic devices onto complementary metal oxide semiconductor-compatible platforms. In this study, we leverage the phenomenon of the anisotropic growth of graphene nanoribbons from rationally placed graphene nanoseeds and their rotational self-alignment during chemical vapor deposition to synthesize mesoscale graphene nanomeshes over areas spanning several hundred square micrometers. Lithographically patterned nanoseeds are defined on a Ge(001) surface at pitches ranging from 50 to 100 nm, which serve as starting sites for subsequent nanoribbon growth. Rotational self-alignment of the nanoseeds followed by anisotropic growth kinetics causes the resulting nanoribbons to be oriented along each of the equivalent, orthogonal Ge⟨110⟩ directions with equal probability. As the nanoribbons grow, they fuse, creating a continuous nanomesh. In contrast to nanomesh synthesis via top-down approaches, this technique yields nanomeshes with atomically faceted edges and covalently bonded junctions, which are important for maximizing charge transport properties. Additionally, we simulate the electrical characteristics of nanomeshes synthesized from different initial nanoseed-sizes, size-polydispersities, pitches, and device channel lengths to identify a parameter-space for acceptable on/off ratios and on-conductance in semiconductor electronics. The simulations show that decreasing seed diameter and pitch are critical to increasing nanomesh on/off ratio and on-conductance, respectively. With further refinements in lithography, nanomeshes obtained via seeded synthesis and anisotropic growth are likely to have superior electronic properties with tremendous potential in a multitude of applications, such as radio frequency communications, sensing, thin-film electronics, and plasmonics.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); University of Wisconsin Nanoscale Science and Engineering Center

Grant/Contract Number:: SC0012704; SC0016007; DMR-1752797; DMR-1121288; 0079983; 0520057; DMR-0832760; 0425880; DMR-0079983; DMR-0520057; DMR-0425880

OSTI ID:: 1989629

Alternate ID(s):: OSTI ID: 1969795

Report Number(s):: BNL-224579-2023-JAAM; TRN: US2404281

Journal Information:: APL Materials, Vol. 11, Issue 4; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Bottom-up synthesis of mesoscale nanomeshes of graphene nanoribbons on germanium

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