skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Enhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporation

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4850755· OSTI ID:22253755
;  [1]; ;  [2];  [3];  [1];  [4];  [5]
  1. Zhejiang Normal University, Jinhua, Zhejiang Province 321004 (China)
  2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  3. Department of Physics, Beijing Institute of Technology, Beijing 100081 (China)
  4. Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States)
  5. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We demonstrate in this work controllable synthesis of cubic InN nanocrystals through Mn doping. We show that the pristine nanocrystal has the wurtzite structure, but can be converted into the zinc-blende (ZB) structure when it is doped with Mn. Our first-principles calculations show that the phase transition is caused by the stronger p-d coupling between the host p valence state and the impurity d level in the ZB structure, which makes the hole generation in the ZB structure easier. Quantum confinement in the nanocrystals further enhanced this effect. This observation lays an important foundation for defects control of crystal phases.

OSTI ID:
22253755
Journal Information:
Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English