In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Physics Department and the Joint Laboratory on New Materials, University of Hong Kong, Pokfulam Road, Hong Kong (China)
- Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system.
- OSTI ID:
- 20666324
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 71; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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