Impact of transparent electrode on photoresponse of ZnO-based phototransistor

Journal Article · Mon Dec 16 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4855055· OSTI ID:22253688

Lee, Seunghyup; Ahn, Seung-Eon; Jeon, Yongwoo; Ahn, Ji-Hoon; Song, Ihun; Kim, Jungwoo; Choi, Hyung; Chung, U-in; Park, Jaechul ^[1]; Jeon, Sanghun ^[2]; Yun, Dong-Jin ^[3]

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1. Advanced Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)
2. Department of Display and Semiconductor Physics and Department of Applied Physics, Korea University, 2511, Sejongro, Sejong, 339–700 (Korea, Republic of)
3. Analytical Science Group, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)

ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer.

• OSTI ID: 22253688
• Journal Information: Applied Physics Letters, Vol. 103, Issue 25; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRODES
ELECTRONS
IRRADIATION
OPACITY
PHOTONS
THIN FILMS
TRANSISTORS
ZINC OXIDES