MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass

Journal Article · Fri Jan 01 00:00:00 EST 2021 · IEEE Journal of the Electron Devices Society

DOI:https://doi.org/10.1109/JEDS.2021.3108904· OSTI ID:1829413

Yu, Fangzhou ; Hong, Wen-Chiang; Li, Guangyuan ; Li, Yuxuan ; Lu, Ming; Lu, Yicheng

We demonstrate the first wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) built on glass. The Mg_0.03Zn_0.97O (MZO) semiconductor served as the channel layer and ferroelectric Ni_0.02Mg_0.15Zn_0.83O (NMZO) serves in the gate stack. The Al-doped ZnO (AZO) is employed as the transparent conductive oxide (TCO) for source and drain electrodes. The NC-TTFT on glass shows an average optical transmittance of 91% in the visible spectrum. The subthreshold swing (SS) value is significantly reduced over the reference transparent thin-film transistor (TTFT) without a ferroelectric layer. The minimum SS value of the NC-TTFT reaches 17 mV/dec. With normally-off operation and high on/off current ratio of 10⁷, this NC-TTFT on glass technology shows promising potential for wearable systems such as augmented reality (AR) smart glasses.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• Grant/Contract Number: SC0012704
• OSTI ID: 1829413
• Alternate ID(s): OSTI ID: 1829414; OSTI ID: 1837212
• Report Number(s): BNL-222533-2021-JAAM; 9525131
• Journal Information: IEEE Journal of the Electron Devices Society, Journal Name: IEEE Journal of the Electron Devices Society Vol. 9; ISSN 2168-6734
• Publisher: Institute of Electrical and Electronics Engineers
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
negative capacitance
transparent electronics
thin-film transistor
subthreshold swing