Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass
Abstract
Tunable surface acoustic wave (SAW) devices have attracted considerable interests due to its applications in emerging fields, such as secured wireless communication, adaptive signal processing, and smart sensing systems. We report a dual-input-voltage-controlled tunable SAW built on glass, which uses a ZnO-based dual-layer structure consisting of a piezoelectric Ni- doped ZnO (NZO) and semiconducting Mg-doped ZnO (MZO). The interdigital (IDT) electrodes are buried in the piezoelectric NZO layer to form the delay line for SAW propagation, while the semiconductor MZO layer serves as the channel of a thin film transistor (TFT) to modulate the conductivity. Results show the interface between MZO channel and SiO 2 gate dielectric layer of the TFTT significantly impacts on SAW tuning performances due to Zn diffusion from MZO into SiO 2. The TFT-SAW device using an ultra-thin MgO layer as interface modification enables SAW frequency tuning of 0.53% under solely V gs control with 0–12 V. The required voltage range is significantly reduced compared regular MZO-NZO TFT-SAW counterpart (Δf/f c ~ 0.25%; V gs –30 to –14 V) without interface modification. With additional control of V ds, the SAW frequency tunability is further expanded from 0.46% to 0.63%. As a result, this dual-input voltage-controlled frequency tuningmore »
- Authors:
-
[1];
- Rutgers Univ., Piscataway, NJ (United States)
- Shanghai Univ., Shanghai (People's Republic of China)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1495008
- Report Number(s):
- BNL-211274-2019-JAAM
Journal ID: ISSN 0964-1726
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Journal Article: Accepted Manuscript
- Journal Name:
- Smart Materials and Structures
- Additional Journal Information:
- Journal Volume: 27; Journal Issue: 8; Journal ID: ISSN 0964-1726
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; frequency tuning; adaptive signal processing; surface acoustic wave; multifunctional
Citation Formats
Li, Rui, Li, Guangyuan, Hong, Wen -Chiang, Reyes, Pavel I., Tang, Ke, Yang, Keyang, Wang, Szu -Ying, Ye, Hongfei, Li, Yuxuan, Zhang, Lihua, Kisslinger, Kim, and Lu, Yicheng. Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass. United States: N. p., 2018.
Web. doi:10.1088/1361-665X/aad006.
Li, Rui, Li, Guangyuan, Hong, Wen -Chiang, Reyes, Pavel I., Tang, Ke, Yang, Keyang, Wang, Szu -Ying, Ye, Hongfei, Li, Yuxuan, Zhang, Lihua, Kisslinger, Kim, & Lu, Yicheng. Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass. United States. https://doi.org/10.1088/1361-665X/aad006
Li, Rui, Li, Guangyuan, Hong, Wen -Chiang, Reyes, Pavel I., Tang, Ke, Yang, Keyang, Wang, Szu -Ying, Ye, Hongfei, Li, Yuxuan, Zhang, Lihua, Kisslinger, Kim, and Lu, Yicheng. Wed .
"Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass". United States. https://doi.org/10.1088/1361-665X/aad006. https://www.osti.gov/servlets/purl/1495008.
@article{osti_1495008,
title = {Tunable surface acoustic wave device using semiconducting MgZnO and piezoelectric NiZnO dual-layer structure on glass},
author = {Li, Rui and Li, Guangyuan and Hong, Wen -Chiang and Reyes, Pavel I. and Tang, Ke and Yang, Keyang and Wang, Szu -Ying and Ye, Hongfei and Li, Yuxuan and Zhang, Lihua and Kisslinger, Kim and Lu, Yicheng},
abstractNote = {Tunable surface acoustic wave (SAW) devices have attracted considerable interests due to its applications in emerging fields, such as secured wireless communication, adaptive signal processing, and smart sensing systems. We report a dual-input-voltage-controlled tunable SAW built on glass, which uses a ZnO-based dual-layer structure consisting of a piezoelectric Ni- doped ZnO (NZO) and semiconducting Mg-doped ZnO (MZO). The interdigital (IDT) electrodes are buried in the piezoelectric NZO layer to form the delay line for SAW propagation, while the semiconductor MZO layer serves as the channel of a thin film transistor (TFT) to modulate the conductivity. Results show the interface between MZO channel and SiO2 gate dielectric layer of the TFTT significantly impacts on SAW tuning performances due to Zn diffusion from MZO into SiO2. The TFT-SAW device using an ultra-thin MgO layer as interface modification enables SAW frequency tuning of 0.53% under solely V gs control with 0–12 V. The required voltage range is significantly reduced compared regular MZO-NZO TFT-SAW counterpart (Δf/fc ~ 0.25%; V gs –30 to –14 V) without interface modification. With additional control of V ds, the SAW frequency tunability is further expanded from 0.46% to 0.63%. As a result, this dual-input voltage-controlled frequency tuning device on glass is promising for low-voltage, low-cost portable smart sensors and voltage-controlled reconfigurable radio-frequency identification tags.},
doi = {10.1088/1361-665X/aad006},
url = {https://www.osti.gov/biblio/1495008},
journal = {Smart Materials and Structures},
issn = {0964-1726},
number = 8,
volume = 27,
place = {United States},
year = {2018},
month = {7}
}
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Figures / Tables:
Figure 1: Schematic of a frequency tuning device based on an integrated TFT-SAW: (a) 3D representation of the device structure, (b) 2D ($x–z$ plane) presentation, where TFT is aligned in $$x$$-direction; (c) 2D (y–$$z$$ plane) presentation, where the SAW travels between the IDTs buried between SiO 2 and NZO layer.
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