Precise lattice location of substitutional and interstitial Mg in AlN

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858389· OSTI ID:22253258

Amorim, L. M.; Pereira, L. M. C.; Decoster, S.; Temst, K.; Vantomme, A. ^[1]; Wahl, U.; Correia, J. G. ^[2]; Silva, D. J. ^[3]; Silva, M. R. da ^[4]; Gottberg, A. ^[5]

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1. Instituut voor Kern- en Stralingsfysica, KU Leuven, 3001 Leuven (Belgium)
2. Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém (Portugal)
3. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto (Portugal)
4. Centro de Física Nuclear, Universidade de Lisboa, Libsoa 1649-003 (Portugal)
5. CERN-ISOLDE, 1211 Geneva 23 (Switzerland)

The lattice site location of radioactive {sup 27}Mg implanted in AlN was determined by means of emission channeling. The majority of the {sup 27}Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors.

• OSTI ID: 22253258
• Journal Information: Applied Physics Letters, Vol. 103, Issue 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ALUMINIUM NITRIDES
CHANNELING
DOPED MATERIALS
MAGNESIUM 27
SEMICONDUCTOR MATERIALS