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Title: Precise lattice location of substitutional and interstitial Mg in AlN

The lattice site location of radioactive {sup 27}Mg implanted in AlN was determined by means of emission channeling. The majority of the {sup 27}Mg was found to substitute for Al, yet significant fractions (up to 33%) were also identified close to the octahedral interstitial site. The activation energy for interstitial Mg diffusion is estimated to be between 1.1 eV and 1.7 eV. Substitutional Mg is shown to occupy ideal Al sites within a 0.1 Å experimental uncertainty. We discuss the absence of significant displacements from ideal Al sites, in the context of the current debate, on Mg doped nitride semiconductors.
Authors:
; ; ; ;  [1] ; ;  [2] ;  [3] ;  [4] ;  [5]
  1. Instituut voor Kern- en Stralingsfysica, KU Leuven, 3001 Leuven (Belgium)
  2. Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, 2686-953 Sacavém (Portugal)
  3. IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Universidade do Porto, 4169-007 Porto (Portugal)
  4. Centro de Física Nuclear, Universidade de Lisboa, Libsoa 1649-003 (Portugal)
  5. CERN-ISOLDE, 1211 Geneva 23 (Switzerland)
Publication Date:
OSTI Identifier:
22253258
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; ALUMINIUM NITRIDES; CHANNELING; DOPED MATERIALS; MAGNESIUM 27; SEMICONDUCTOR MATERIALS