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Title: Ti{sub 2}MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

Ti{sub 2}MnZ (Z=Al, Ga, In) compounds with CuHg{sub 2}Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130 (China)
  2. College of Physics and Information Technology, Chongqing Normal University, 401331, Chongqing (China)
Publication Date:
OSTI Identifier:
22253200
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LATTICE PARAMETERS; MAGNETIC MOMENTS; SEMICONDUCTOR MATERIALS; SPIN