Ti{sub 2}MnZ (Z=Al, Ga, In) compounds: Nearly spin gapless semiconductors

Journal Article · Tue Apr 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4871403· OSTI ID:22253200

Jia, H. Y.; Dai, X. F.; Wang, L. Y.; Liu, R.; Wang, X. T.; Li, P. P.; Cui, Y. T. ^[1]

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1. College of Physics and Information Technology, Chongqing Normal University, 401331, Chongqing (China)

Ti{sub 2}MnZ (Z=Al, Ga, In) compounds with CuHg{sub 2}Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment.

• OSTI ID: 22253200
• Journal Information: AIP Advances, Vol. 4, Issue 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LATTICE PARAMETERS
MAGNETIC MOMENTS
SEMICONDUCTOR MATERIALS
SPIN