Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds

Lukashev, P.; Kharel, P.; Gilbert, S.; Staten, B.; Hurley, N.; Fuglsby, R.; Huh, Y.; Valloppilly, S.; Zhang, W.; Yang, K.; Skomski, R.; Sellmyer, D. J.

doi:10.1063/1.4945600

Title: Investigation of spin-gapless semiconductivity and half-metallicity in Ti₂MnAl-based compounds

Journal Article · Mon Apr 04 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945600· OSTI ID:1469706

Lukashev, P. ^[1]; Kharel, P. ^[2]; Gilbert, S. ^[3];

^[1]; Hurley, N. ^[1];

^[3]; Huh, Y. ^[3]; Valloppilly, S. ^[4]; Zhang, W. ^[5]; Yang, K. ^[6]; Skomski, R. ^[5]; Sellmyer, D. J. ^[5]

Univ. of Northern Iowa, Cedar Falls, IA (United States). Dept. of Physics
Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience; South Dakota State Univ., Brookings, SD (United States). Dept. of Physics
South Dakota State Univ., Brookings, SD (United States). Dept. of Physics
Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience
Univ. of Nebraska, Lincoln, NE (United States). Nebraska Center for Materials and Nanoscience and Dept. of Physics and Astronomy
South Dakota State Univ., Brookings, SD (United States). Dept. of Physics; Hohai Univ., Jiangsu (China). College of Mechanical and Electrical Engineering

The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti₂MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: FG02-04ER46152; NNCI: 1542182

OSTI ID:: 1469706

Alternate ID(s):: OSTI ID: 1245497; OSTI ID: 1469703

Journal Information:: Applied Physics Letters, Vol. 108, Issue 14; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 55 works

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Half-metallicity in highly L21-ordered CoFeCrAl thin films Jin, Y.; Kharel, P.; Valloppilly, S. R. Applied Physics Letters, Vol. 109, Issue 14 https://doi.org/10.1063/1.4964464	journal	October 2016
Recent advances in Dirac spin-gapless semiconductors Wang, Xiaotian; Li, Tingzhou; Cheng, Zhenxiang Applied Physics Reviews, Vol. 5, Issue 4 https://doi.org/10.1063/1.5042604	journal	December 2018
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