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Title: SiGe quantum dots for fast hole spin Rabi oscillations

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [4] ;  [7] ;  [4] ;  [2]
  1. SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)
  2. (Germany)
  3. (Austria)
  4. Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)
  5. (CSIC-UPV/EHU) and Donostia International Physics Center DIPC, E-20018 San Sebastián (Spain)
  6. (Spain)
  7. Department of Physics, Yale University, New Haven, Connecticut 06520 (United States)
Publication Date:
OSTI Identifier:
22253152
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 26; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; GERMANIUM SILICIDES; HOLES; LANDE FACTOR; MODULATION; OSCILLATIONS; QUANTUM DOTS; SPIN; TENSORS