Single and double hole quantum dots in strained Ge/SiGe quantum wells

Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin; Chuang, Yen; Moussa, Jonathan; Maurer, Leon N.; Li, Jiun-Yun; Lu, Tzu-Ming; Luhman, Dwight R.

doi:10.1088/1361-6528/ab061e

Single and double hole quantum dots in strained Ge/SiGe quantum wells

Journal Article · 14 March 2019 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/ab061e· OSTI ID:1502975

^[1]; ^[1]; Su, Yi-Hsin ^[2]; Chuang, Yen ^[2]; ^[1]; ^[1]; ^[2]; Lu, Tzu-Ming ^[1]; Luhman, Dwight R. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Electronics Engineering

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin–orbit coupling strength, and absence of valley states. We use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ~ 0.08 m ₀, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit–qubit interactions in an industry-compatible semiconductor platform.

View Accepted Manuscript (DOE)

Research Organization:: National Taiwan Univ., Taipei (Taiwan); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: Ministry of Science and Technology (MOST) (Taiwan); SNL Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)

Grant/Contract Number:: NA0003525

Other Award/Contract Number:: 107-2622-8-002-018

OSTI ID:: 1502975

Alternate ID(s):: OSTI ID: 22885001
OSTI ID: 1568042

Report Number(s):: SAND2019-3007J; 673530

Journal Information:: Nanotechnology, Journal Name: Nanotechnology Journal Issue: 21 Vol. 30; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (53)

Heavy-Hole States in Germanium Hut Wires Watzinger, Hannes; Kloeffel, Christoph; Vukušić, Lada Nano Letters, Vol. 16, Issue 11 https://doi.org/10.1021/acs.nanolett.6b02715	journal	October 2016
Coupling a Germanium Hut Wire Hole Quantum Dot to a Superconducting Microwave Resonator Li, Yan; Li, Shu-Xiao; Gao, Fei Nano Letters, Vol. 18, Issue 3 https://doi.org/10.1021/acs.nanolett.8b00272	journal	February 2018
Ballistic One-Dimensional Holes with Strong g -Factor Anisotropy in Germanium Mizokuchi, R.; Maurand, R.; Vigneau, F. Nano Letters, Vol. 18, Issue 8 https://doi.org/10.1021/acs.nanolett.8b01457	journal	July 2018
Resistively Detected Nuclear Magnetic Resonance in n- and p-Type GaAs Quantum Point Contacts Keane, Z. K.; Godfrey, M. C.; Chen, J. C. H. Nano Letters, Vol. 11, Issue 8 https://doi.org/10.1021/nl201211d	journal	August 2011
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit Kim, Dohun; Shi, Zhan; Simmons, C. B. Nature, Vol. 511, Issue 7507 https://doi.org/10.1038/nature13407	journal	July 2014
A programmable two-qubit quantum processor in silicon Watson, T. F.; Philips, S. G. J.; Kawakami, E. Nature, Vol. 555, Issue 7698 https://doi.org/10.1038/nature25766	journal	February 2018
A CMOS silicon spin qubit Maurand, R.; Jehl, X.; Kotekar-Patil, D. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13575	journal	November 2016
Fast coherent manipulation of three-electron states in a double quantum dot Shi, Zhan; Simmons, C. B.; Ward, Daniel R. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4020	journal	January 2014
Decoupling a hole spin qubit from the nuclear spins Prechtel, Jonathan H.; Kuhlmann, Andreas V.; Houel, Julien Nature Materials, Vol. 15, Issue 9 https://doi.org/10.1038/nmat4704	journal	July 2016
An addressable quantum dot qubit with fault-tolerant control-fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. Nature Nanotechnology, Vol. 9, Issue 12 https://doi.org/10.1038/nnano.2014.216	journal	October 2014
Controllable valley splitting in silicon quantum devices Goswami, Srijit; Slinker, K. A.; Friesen, Mark Nature Physics, Vol. 3, Issue 1 https://doi.org/10.1038/nphys475	journal	December 2006
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-01113-2	journal	October 2017
Gate-controlled quantum dots and superconductivity in planar germanium Hendrickx, N. W.; Franke, D. P.; Sammak, A. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-05299-x	journal	July 2018
A germanium hole spin qubit Watzinger, Hannes; Kukučka, Josip; Vukušić, Lada Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-06418-4	journal	September 2018
New signatures of the spin gap in quantum point contacts Hudson, K. L.; Srinivasan, A.; Goulko, O. Nature Communications, Vol. 12, Issue 1 https://doi.org/10.1038/s41467-020-19895-3	journal	January 2021
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime Chou, C. -T.; Jacobson, N. T.; Moussa, J. E. Nanoscale, Vol. 10, Issue 44 https://doi.org/10.1039/C8NR05677C	journal	January 2018
Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot Klein, Levente J.; Savage, Donald E.; Eriksson, Mark A. Applied Physics Letters, Vol. 90, Issue 3 https://doi.org/10.1063/1.2431760	journal	January 2007
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots Borselli, M. G.; Eng, K.; Croke, E. T. Applied Physics Letters, Vol. 99, Issue 6 https://doi.org/10.1063/1.3623479	journal	August 2011
A prototype silicon double quantum dot with dispersive microwave readout Schmidt, A. R.; Henry, E.; Lo, C. C. Journal of Applied Physics, Vol. 116, Issue 4 https://doi.org/10.1063/1.4890835	journal	July 2014
A reconfigurable gate architecture for Si/SiGe quantum dots Zajac, D. M.; Hazard, T. M.; Mi, X. Applied Physics Letters, Vol. 106, Issue 22 https://doi.org/10.1063/1.4922249	journal	June 2015
Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure Laroche, D.; Huang, S. -H.; Chuang, Y. Applied Physics Letters, Vol. 108, Issue 23 https://doi.org/10.1063/1.4953399	journal	June 2016
Fabrication of quantum dots in undoped Si/Si _0.8 Ge _0.2 heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961889	journal	August 2016
Measuring hole spin states of single quantum dot in germanium hut wire Li, Shu-Xiao; Li, Yan; Gao, Fei Applied Physics Letters, Vol. 110, Issue 13 https://doi.org/10.1063/1.4979521	journal	March 2017
Effective g factor of low-density two-dimensional holes in a Ge quantum well Lu, T. M.; Harris, C. T.; Huang, S. -H. Applied Physics Letters, Vol. 111, Issue 10 https://doi.org/10.1063/1.4990569	journal	September 2017
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si _0.8 Ge _0.2 quantum well hetero-structure Studenikin, S. A.; Gaudreau, L.; Kataoka, K. Applied Physics Letters, Vol. 112, Issue 23 https://doi.org/10.1063/1.5023596	journal	June 2018
Hole–spin dephasing time associated with hyperfine interaction in quantum dots Testelin, C.; Bernardot, F.; Eble, B. Physical Review B, Vol. 79, Issue 19 https://doi.org/10.1103/PhysRevB.79.195440	journal	May 2009
Monolithic Growth of Ultrathin Ge Nanowires on Si(001) Zhang, J. J.; Katsaros, G.; Montalenti, F. Physical Review Letters, Vol. 109, Issue 8 https://doi.org/10.1103/PhysRevLett.109.085502	journal	August 2012
Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained- Ge / SiGe Quantum Well Moriya, Rai; Sawano, Kentarou; Hoshi, Yusuke Physical Review Letters, Vol. 113, Issue 8 https://doi.org/10.1103/PhysRevLett.113.086601	journal	August 2014
High-Resolution Valley Spectroscopy of Si Quantum Dots Mi, X.; Péterfalvi, Csaba G.; Burkard, Guido Physical Review Letters, Vol. 119, Issue 17 https://doi.org/10.1103/PhysRevLett.119.176803	journal	October 2017
Electron Cotunneling in a Semiconductor Quantum Dot De Franceschi, S.; Sasaki, S.; Elzerman, J. M. Physical Review Letters, Vol. 86, Issue 5 https://doi.org/10.1103/PhysRevLett.86.878	journal	January 2001
Electric Dipole Spin Resonance for Heavy Holes in Quantum Dots Bulaev, Denis V.; Loss, Daniel Physical Review Letters, Vol. 98, Issue 9 https://doi.org/10.1103/PhysRevLett.98.097202	journal	February 2007
Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures Su, Yi-Hsin; Chuang, Yen; Liu, Chia-You Physical Review Materials, Vol. 1, Issue 4 https://doi.org/10.1103/PhysRevMaterials.1.044601	journal	September 2017
Spins in few-electron quantum dots Hanson, R.; Kouwenhoven, L. P.; Petta, J. R. Reviews of Modern Physics, Vol. 79, Issue 4 https://doi.org/10.1103/RevModPhys.79.1217	journal	October 2007
Isotopically enhanced triple-quantum-dot qubit Eng, Kevin; Ladd, Thaddeus D.; Smith, Aaron Science Advances, Vol. 1, Issue 4 https://doi.org/10.1126/sciadv.1500214	journal	May 2015
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots Petta, J. R. Science, Vol. 309, Issue 5744 https://doi.org/10.1126/science.1116955	journal	September 2005
Resonantly driven CNOT gate for electron spins Zajac, D. M.; Sigillito, A. J.; Russ, M. Science, Vol. 359, Issue 6374 https://doi.org/10.1126/science.aao5965	journal	December 2017
Electron Cotunneling in a Semiconductor Quantum Dot De Franceschi, S.; Elzerman, J. M.; Kouwenhoven, L. P. The American Physical Society https://doi.org/10.17877/de290r-12212	text	January 2001
Hole spin dephasing time associated to hyperfine interaction in quantum dots Testelin, C.; Bernardot, F.; Eble, B. arXiv https://doi.org/10.48550/arxiv.0903.3874	text	January 2009
Fast coherent manipulation of three-electron states in a double quantum dot Shi, Zhan; Simmons, C. B.; Ward, Daniel R. arXiv https://doi.org/10.48550/arxiv.1308.0588	text	January 2013
Quantum control and process tomography of a semiconductor quantum dot hybrid qubit Kim, Dohun; Shi, Zhan; Simmons, C. B. arXiv https://doi.org/10.48550/arxiv.1401.4416	text	January 2014
An addressable quantum dot qubit with fault-tolerant control fidelity Veldhorst, M.; Hwang, J. C. C.; Yang, C. H. arXiv https://doi.org/10.48550/arxiv.1407.1950	text	January 2014
A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots Zajac, D. M.; Hazard, T. M.; Mi, X. arXiv https://doi.org/10.48550/arxiv.1502.01624	text	January 2015
Coherent coupling between a quantum dot and a donor in silicon Harvey-Collard, Patrick; Jacobson, N. Tobias; Rudolph, Martin arXiv https://doi.org/10.48550/arxiv.1512.01606	text	January 2015
A CMOS silicon spin qubit Maurand, R.; Jehl, X.; Patil, D. Kotekar arXiv https://doi.org/10.48550/arxiv.1605.07599	text	January 2016
Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer Lu, T. M.; Gamble, J. K.; Muller, R. P. arXiv https://doi.org/10.48550/arxiv.1608.08107	text	January 2016
High Resolution Valley Spectroscopy of Si Quantum Dots Mi, X.; Peterfalvi, Csaba G.; Burkard, Guido arXiv https://doi.org/10.48550/arxiv.1704.06312	text	January 2017
A programmable two-qubit quantum processor in silicon Watson, T. F.; Philips, S. G. J.; Kawakami, E. arXiv https://doi.org/10.48550/arxiv.1708.04214	text	January 2017
Gate-controlled quantum dots and superconductivity in planar germanium Hendrickx, N. W.; Franke, D. P.; Sammak, A. arXiv https://doi.org/10.48550/arxiv.1801.08869	text	January 2018
Ballistic one-dimensional holes with strong g-factor anisotropy in germanium Mizokuchi, R.; Maurand, R.; Vigneau, F. arXiv https://doi.org/10.48550/arxiv.1804.04674	text	January 2018
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime Chou, Chung-Tao; Jacobson, Noah Tobias; Moussa, Jonathan Edward arXiv https://doi.org/10.48550/arxiv.1807.01400	preprint	January 2018
Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot Klein, Levente J.; Savage, Donald E.; Eriksson, Mark A. arXiv https://doi.org/10.48550/arxiv.cond-mat/0612413	text	January 2006
Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well Moriya, Rai; Sawano, Kentarou; Hoshi, Yusuke Universität Regensburg https://doi.org/10.5283/epub.30750	text	January 2014
Decoupling a hole spin qubit from the nuclear spins Prechtel, Jonathan H.; Kuhlmann, Andreas V.; Houel, Julien Nature Publishing Group https://doi.org/10.5451/unibas-ep52042	text	January 2016

Cited By (1)

Light effective hole mass in undoped Ge/SiGe quantum wells Lodari, M.; Tosato, A.; Sabbagh, D. Physical Review B, Vol. 100, Issue 4 https://doi.org/10.1103/physrevb.100.041304	journal	July 2019

Similar Records

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Journal Article · 2016 · npj Quantum Information · OSTI ID:1340242

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Journal Article · 2022 · Nature Communications · OSTI ID:2418988

Leveraging Spin-Orbit Coupling in Ge/SiGe Heterostructures for Quantum Information Transfer

Technical Report · 2021 · OSTI ID:1820237

Related Subjects

36 MATERIALS SCIENCE
SiGe
germanium
lithographic quantum dot
nanostructure
two-dimensional hole gas

Single and double hole quantum dots in strained Ge/SiGe quantum wells

Citation Formats

References (53)

Cited By (1)

Similar Records

Related Subjects