Single and double hole quantum dots in strained Ge/SiGe quantum wells

Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin; Chuang, Yen; Moussa, Jonathan; Maurer, Leon N.; Li, Jiun-Yun; Lu, Tzu-Ming; Luhman, Dwight R.

doi:10.1088/1361-6528/ab061e

Single and double hole quantum dots in strained Ge/SiGe quantum wells

Journal Article · 14 March 2019 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/ab061e· OSTI ID:1502975

^[1]; ^[1]; Su, Yi-Hsin ^[2]; Chuang, Yen ^[2]; ^[1]; ^[1]; ^[2]; Lu, Tzu-Ming ^[1]; Luhman, Dwight R. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan). Graduate Inst. of Electronics Engineering

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin–orbit coupling strength, and absence of valley states. We use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ~ 0.08 m ₀, is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit–qubit interactions in an industry-compatible semiconductor platform.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); National Taiwan Univ., Taipei (Taiwan)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); SNL Laboratory Directed Research and Development (LDRD) Program; Ministry of Science and Technology (MOST) (Taiwan)

Grant/Contract Number:: NA0003525; 107-2622-8-002-018

OSTI ID:: 1502975

Report Number(s):: SAND2019-3007J; 673530

Journal Information:: Nanotechnology, Vol. 30, Issue 21; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 21 works

Citation information provided by
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