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Title: Plasma-enhanced chemical vapor deposition of graphene on copper substrates

A plasma enhanced vapor deposition process is used to synthesize graphene from a hydrogen/methane gas mixture on copper samples. The graphene samples were transferred onto SiO{sub 2} substrates and characterized by Raman spectroscopic mapping and atomic force microscope topographical mapping. Analysis of the Raman bands shows that the deposited graphene is clearly SLG and that the sheets are deposited on large areas of several mm{sup 2}. The defect density in the graphene sheets is calculated using Raman measurements and the influence of the process pressure on the defect density is measured. Furthermore the origin of these defects is discussed with respect to the process parameters and hence the plasma environment.
Authors:
;  [1] ; ;  [2] ;  [3]
  1. Faculty of Chemistry and CENIDE, University Duisburg-Essen, Carl-Benz-Stra├če 199, 47057 Duisburg (Germany)
  2. Faculty of Physics and CENIDE, University Duisburg Essen, Lotharstra├če 1, 47057 Duisburg (Germany)
  3. Institute of Materials Science, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
Publication Date:
OSTI Identifier:
22253082
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 4; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COPPER; DEFECTS; DENSITY; DEPOSITS; GRAPHENE; MIXTURES; PLASMA; SILICA; SILICON OXIDES; SUBSTRATES