Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength
- Department of Electrical and Computer Engineering, University of Missouri, 349 Engineering Building West, Columbia, Missouri 65201 (United States)
- Georgia Institute of Technology, Woodruff School of Mechanical Engineering, Atlanta, Georgia 30332 (United States)
The authors have studied the impact of epilayer strain on the deposition of InAs/GaAs on (100) and (111)B with 2° offset toward<2-1-1> surfaces. Consequences of a 7% lattice mismatch between these orientations in the form of three-dimensional growth are less apparent for (111)B with 2° offset toward<2-1-1> surfaces compared to (100). By exploring a range of molecular beam epitaxy process parameters for InAs/GaAs growth and utilizing scanning electron microscopy, atomic force microscopy, and Raman spectroscopy to evaluate the quality of these strained layers, the authors develop empirical models that describe the influence of the process conditions in regards to surface roughness with >92% accuracy. The smoothest InAs/GaAs samples demonstrated average surface roughness of 0.08 nm for 10 μm{sup 2} areas, albeit at very low deposition rates. The authors have found the most important process conditions to be substrate temperature and deposition rate, leading us to believe that controlling diffusion length may be the key to reducing defects in severely strained structures. InGaAs/AlGaAs quantum cascade laser structures were also produced on (111)B with 2° offset toward<2-1-1> to take advantage of the piezoelectric effect, and the modified laser transitions due to these effects were observed.
- OSTI ID:
- 22224122
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 6; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
ATOMIC FORCE MICROSCOPY
CRYSTAL DEFECTS
DEPOSITION
DIFFUSION LENGTH
GALLIUM ARSENIDES
INDIUM ARSENIDES
LASERS
MOLECULAR BEAM EPITAXY
PIEZOELECTRICITY
QUANTUM WELLS
RAMAN SPECTRA
RAMAN SPECTROSCOPY
ROUGHNESS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
STRAINS
SURFACES