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Title: Features of the electroluminescence spectra of quantum-confined silicon p{sup +}-n heterojunctions in the infrared spectral region

The results of studying the characteristics of optical emission in various regions of quantum-confined silicon p{sup +}-n heterojunctions heavily doped with boron are analyzed. The results obtained allow one to conclude that near-infrared electroluminescence arises near the heterointerface between the nanostructured wide-gap silicon p{sup +}-barrier heavily doped with boron and n-type silicon (100), the formation of which included the active involvement of boron dipole centers.
Authors:
; ; ;  [1] ;  [2]
  1. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
  2. Saint Petersburg State Polytechnical University (Russian Federation)
Publication Date:
OSTI Identifier:
22210435
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 11; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; BORON; DIPOLES; DOPED MATERIALS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; NANOSTRUCTURES; SILICON; SPECTRA