Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
- Materials Department, University of California, Santa Barbara, California 93106 (United States)
- Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)
Atom probe tomography was used to characterize AlN interlayers in AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (PAMBE), NH{sub 3}-based molecular beam epitaxy (NH{sub 3}-MBE), and metal-organic chemical vapor deposition (MOCVD). The PAMBE-grown AlN interlayer had the highest purity, with nearly 100% of group-III sites occupied by Al. The group-III site concentrations of Al for interlayers grown by NH{sub 3}-MBE and MOCVD were {approx}85% and {approx}47%, respectively. Hall measurements were performed to determine the two-dimensional electron gas mobility and sheet concentration. Sheet concentrations were {approx}25%-45% higher with molecular beam epitaxy than with MOCVD, and these results matched well with atom probe data.
- OSTI ID:
- 22162790
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 11; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
AMMONIA
ATOMS
CHEMICAL VAPOR DEPOSITION
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
HALL EFFECT
HETEROJUNCTIONS
LAYERS
MOLECULAR BEAM EPITAXY
ORGANOMETALLIC COMPOUNDS
PLASMA
PROBES
SEMICONDUCTOR MATERIALS
TERNARY ALLOY SYSTEMS
TOMOGRAPHY
TWO-DIMENSIONAL CALCULATIONS