Persistent photoconductivity and electron mobility in In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP quantum-well structures
- Moscow State University, Department of Low-Temperature Physics and Superconductivity (Russian Federation)
- National Research Nuclear University MEPhI (Russian Federation)
- Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.
- OSTI ID:
- 22121704
- Journal Information:
- Semiconductors, Vol. 47, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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