Oxygen partial pressure influenced structural and optical properties of DC magnetron sputtered ZrO{sub 2} films

Journal Article · Tue Feb 05 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4791258· OSTI ID:22116024

Kondaiah, P.; Madhavi, V.; Uthanna, S. ^[1]

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1. Department of Physics, Sri Venkateswara University, Tirupati-517502 (India)

Thin films of zirconium oxide (ZrO{sub 2}) were deposited on (100) p-silicon and quartz substrates by sputtering of metallic zirconium target under different oxygen partial pressures in the range 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa. The effect of oxygen partial pressure on the structural and optical properties of the deposited films was systematically investigated. The deposition rate of the films decreased from 3.3 to 1.83 nm/min with the increase of oxygen partial pressure from 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa respectively. The X-ray diffraction profiles revealed that the films exhibit (111) refection of zirconium oxide in monoclinic phase. The optical band gap of the films increased from 5.62 to 5.80 eV and refractive index increased from 2.01 to 2.08 with the increase of oxygen partial pressure from 8 Multiplication-Sign 10{sup -3}-6 Multiplication-Sign 10{sup -2}Pa respectively.

• OSTI ID: 22116024
• Journal Information: AIP Conference Proceedings, Vol. 1512, Issue 1; Conference: 57. DAE solid state physics symposium 2012, Mumbai (India), 3-7 Dec 2012; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRONIC STRUCTURE
ENERGY GAP
MONOCLINIC LATTICES
OXYGEN
PARTIAL PRESSURE
PRESSURE DEPENDENCE
P-TYPE CONDUCTORS
QUARTZ
REFRACTIVE INDEX
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
ZIRCONIUM OXIDES