Spectroscopic analysis of Al and N diffusion in HfO{sub 2}
- SEMATECH, 257 Fuller Rd, Albany, New York 12203 (United States)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
- Seton Hall University, 400 South Orange Ave, South Orange, New Jersey 07079 (United States)
X-ray photoelectron core level spectroscopy, secondary ion mass spectroscopy, spectroscopic ellipsometry, and extended x-ray absorption fine structure measurements have been employed to distinguish the effects of Al and N diffusion on the local bonding and microstructure of HfO{sub 2} and its interface with the Si substrate in (001)Si/SiO{sub x}/2 nm HfO{sub 2}/1 nm AlO{sub x} film structures. The diffusion of Al from the thin AlO{sub x} cap layer deposited on both annealed and unannealed HfO{sub 2} has been observed following anneal in N{sub 2} and NH{sub 3} ambient. Both N{sub 2} and NH{sub 3} subsequent anneals were performed to decouple incorporated nitrogen from thermal reactions alone. Causal variations in the HfO{sub 2} microstructure combined with the dependence of Al and N diffusion on initial HfO{sub 2} conditions are presented with respect to anneal temperature and ambient.
- OSTI ID:
- 22089458
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 6; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ALUMINIUM
AMMONIA
ANNEALING
CRYSTAL STRUCTURE
DIFFUSION
ELLIPSOMETRY
FILMS
HAFNIUM OXIDES
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTRA
MASS SPECTROSCOPY
NITROGEN
SILICON OXIDES
SUBSTRATES
THERMAL DIFFUSIVITY
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
X-RAY SPECTROSCOPY