Thermal stability of Al- and Zr-doped HfO{sub 2} thin films grown by direct current magnetron sputtering

Journal Article · Thu Sep 15 04:00:00 EDT 2005 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.2011401· OSTI ID:20723053

Hong, Yeong-Eui; Kim, Yong-Seok; Do, Kihoon; Lee, Dongwon; Ko, Dae-Hong; Ku, Ja-Hum; Kim, Hyoungsub ^[1]

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1. Department of Ceramic Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemoon-Ku, Seoul 120-749 (Korea, Republic of)

Ultrathin HfO{sub 2} dielectric films doped with Al and Zr were grown on p-type Si(100) substrates by dc magnetron sputtering, and their microstructural and electrical properties were examined. Compositions and chemical states of the dielectric films were analyzed by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The HfO{sub 2} films doped with Zr were crystallized even from the as-deposited state, however, the crystallization temperature of the HfO{sub 2} film doped with 16% Al{sub 2}O{sub 3} was delayed up to 900 deg. C. As the annealing temperature increases, high-resolution transmission electron microscopy analyses of all doped HfO{sub 2} films showed an increase of the interfacial layer thickness due to the diffusion of small partial pressure of oxygen in annealing ambient. Our results also showed that the addition of Al{sub 2}O{sub 3} to 14% is not useful for blocking the oxygen diffusion through the (HfO{sub 2}){sub 0.86}(Al{sub 2}O{sub 3}){sub 0.14} film. From the capacitance-voltage measurements, the dielectric constants of the Al- and Zr-doped HfO{sub 2} thin films were measured to be 18.7 and 7.6, respectively.

• OSTI ID: 20723053
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 5 Vol. 23; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM OXIDES
ANNEALING
CAPACITANCE
CHEMICAL STATE
CRYSTAL DOPING
CRYSTALLIZATION
DEPOSITION
DIELECTRIC MATERIALS
DOPED MATERIALS
HAFNIUM OXIDES
LAYERS
OXYGEN
PERMITTIVITY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SPUTTERING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY
ZIRCONIUM