skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

Abstract

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film.

Authors:
; ; ;  [1]
  1. School of Physics, University of Hyderabad, Hyderabad, India 500046 (India)
Publication Date:
OSTI Identifier:
22608720
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1731; Journal Issue: 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALLIZATION; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM OXIDES; LAYERS; MAGNETRONS; MICROSTRUCTURE; MONOCLINIC LATTICES; OPTICAL PROPERTIES; POLYCRYSTALS; REFLECTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON OXIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION; X-RAY DIFFRACTION

Citation Formats

Dhanunjaya, M., Manikanthababu, N., Pathak, A. P., and Rao, S. V. S. Nageswara, E-mail: svnsp@uohyd.ernet.in. Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering. United States: N. p., 2016. Web. doi:10.1063/1.4947949.
Dhanunjaya, M., Manikanthababu, N., Pathak, A. P., & Rao, S. V. S. Nageswara, E-mail: svnsp@uohyd.ernet.in. Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering. United States. doi:10.1063/1.4947949.
Dhanunjaya, M., Manikanthababu, N., Pathak, A. P., and Rao, S. V. S. Nageswara, E-mail: svnsp@uohyd.ernet.in. Mon . "Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering". United States. doi:10.1063/1.4947949.
@article{osti_22608720,
title = {Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering},
author = {Dhanunjaya, M. and Manikanthababu, N. and Pathak, A. P. and Rao, S. V. S. Nageswara, E-mail: svnsp@uohyd.ernet.in},
abstractNote = {Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film.},
doi = {10.1063/1.4947949},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1731,
place = {United States},
year = {Mon May 23 00:00:00 EDT 2016},
month = {Mon May 23 00:00:00 EDT 2016}
}