Effect of growth rate on crystallization of HfO{sub 2} thin films deposited by RF magnetron sputtering

Journal Article · Mon May 23 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4947949· OSTI ID:22608720

Dhanunjaya, M.; Manikanthababu, N.; Pathak, A. P.

Hafnium oxide (HfO{sub 2}) is the potentially useful dielectric material in both; electronics to replace the conventional SiO{sub 2} as gate dielectric and in Optics as anti-reflection coating material. In this present work we have synthesized polycrystalline HfO{sub 2} thin films by RF magnetron sputtering deposition technique with varying target to substrate distance. The deposited films were characterized by X-ray Diffraction, Rutherford Backscattering Spectrometry (RBS) and transmission and Reflection (T&R) measurements to study the growth behavior, microstructure and optical properties. XRD measurement shows that the samples having mixed phase of monoclinic, cubic and tetragonal crystal structure. RBS measurements suggest the formation of Inter Layer (IL) in between Substrate and film.

• OSTI ID: 22608720
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1731; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALLIZATION
DEPOSITION
DIELECTRIC MATERIALS
HAFNIUM OXIDES
LAYERS
MAGNETRONS
MICROSTRUCTURE
MONOCLINIC LATTICES
OPTICAL PROPERTIES
POLYCRYSTALS
REFLECTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON OXIDES
SPUTTERING
SUBSTRATES
THIN FILMS
TRANSMISSION
X-RAY DIFFRACTION