Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

Journal Article · Tue Nov 06 00:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4766542· OSTI ID:22075710

Maier, R; Haeublein, V; Ryssel, H; Voellm, H; Feili, D; Seidel, H; Frey, L ^[1]

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1. Lehrstuhl fuer Elektronische Bauelemente (LEB), Universitaet Erlangen-Nuernberg, Cauerstrasse 6, 91058 Erlangen (Germany)

The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

• OSTI ID: 22075710
• Journal Information: AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
ANNEALING
CESIUM
CHANNELING
EPITAXY
INTERFACES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTROSCOPY
RECRYSTALLIZATION
RUBIDIUM
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEGREGATION
SEMICONDUCTOR MATERIALS
SILICON
SOLIDS
SURFACES