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Title: Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.3591348· OSTI ID:22054106
; ;  [1]
  1. Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

OSTI ID:
22054106
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 29, Issue 4; Other Information: (c) 2011 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
Country of Publication:
United States
Language:
English

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