Highly textured Sr, Nb co-doped BiFeO{sub 3} thin films grown on SrRuO{sub 3}/Si substrates by rf- sputtering
- Universidad Nacional Autonoma de Mexico, Instituto de Investigaciones en Materiales, AP 70360, Mexico D.F. 04510 (Mexico)
- Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, AP 14, Ensenada B.C. 22890 (Mexico)
- Universidad de La Habana, Facultad de Fisica-IMRE, San Lazaro y L, 10400, Louisiana Habana (Cuba)
- Centro de Investigacion en Quimica Aplicada, Enrique Reyna 140, Saltillo, Coah. 25253 (Mexico)
- Universitat de Barcelona, Facultat de Quimica, Av. Diagonal 648, 08028, Barcelona (Spain)
In this study, (011)-highly oriented Sr, Nb co-doped BiFeO{sub 3} (BFO) thin films were successfully grown on SrRuO{sub 3}/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of {approx_equal}5.3 nm and average grain sizes of {approx_equal}65-70 nm for samples with different thicknesses. Remanent polarization values (2P{sub r}) of 54 {mu}C cm{sup -2} at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe{sup 3+}/Fe{sup 2+} trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/SrRuO{sub 3}/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.
- OSTI ID:
- 22036665
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 2; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH COMPOUNDS
CHEMICAL BONDS
CRYSTALS
DOPED MATERIALS
FERROELECTRIC MATERIALS
GRAIN GROWTH
GRAIN SIZE
INTERFACES
LAYERS
MAGNETIZATION
NIOBIUM
POLARIZATION
SPIN GLASS STATE
SPUTTERING
STRONTIUM COMPOUNDS
SUBSTRATES
THIN FILMS
VACANCIES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY