High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Journal Article · Mon Jul 18 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3614434· OSTI ID:22027679

Gacevic, Z; Fernandez-Garrido, S; Calleja, E ^[1]; Rebled, J M; Peiro, F ^[2]; Estrade, S ^[2]

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1. ISOM, Universidad Politecnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain)
2. LENS-MIND-IN2UB, Departament d'Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

We report on properties of high quality {approx}60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be {+-} 1.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

• OSTI ID: 22027679
• Journal Information: Applied Physics Letters, Vol. 99, Issue 3; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY-LOSS SPECTROSCOPY
FLUCTUATIONS
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PLASMONS
ROUGHNESS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION