Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy
- Univ. of California, Santa Barbara, CA (United States)
Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of ~10 nm wide Al-rich cores and ~1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis ω-2θ high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (10{anti 1}2) ω-2θ high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.
- Research Organization:
- Energy Frontier Research Centers (EFRC); Center for Energy Efficient Materials (CEEM)
- Sponsoring Organization:
- USDOE SC Office of Basic Energy Sciences (SC-22)
- DOE Contract Number:
- SC0001009
- OSTI ID:
- 1105182
- Journal Information:
- APPLIED PHYSICS LETTERS, Journal Name: APPLIED PHYSICS LETTERS Vol. 100
- Country of Publication:
- United States
- Language:
- English
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