Low energy electron beam induced vacancy activation in GaN

Journal Article · Mon Mar 19 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3696047· OSTI ID:22025478

Nykaenen, H; Suihkonen, S; Sopanen, M ^[1]; Kilanski, L ^[2]; Tuomisto, F ^[2]

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1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland)
2. Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

• OSTI ID: 22025478
• Journal Information: Applied Physics Letters, Vol. 100, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNIHILATION
CHEMICAL VAPOR DEPOSITION
CRYSTALS
ELECTRON BEAMS
ELECTRONS
GALLIUM NITRIDES
IRRADIATION
KEV RANGE
LAYERS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
POSITRONS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
VACANCIES
VAPOR PHASE EPITAXY