Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN

Journal Article · Mon Feb 01 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3306736· OSTI ID:21347261

Shaoqiang, Chen; Uedono, Akira; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro ^[1]; Ishibashi, Shoji ^[2]

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1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
2. Research Institute for Computational Sciences, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

Erbium-doped GaN samples grown with different V/III ratios through gas source molecular beam epitaxy were prepared to investigate the influence of the V/III ratio on the defect formation and the optical activity of the Er-related luminescence center. Obvious V/III ratio dependence was observed in photoluminescence measurement. Positron annihilation spectroscopy measurements suggested that V{sub Ga}-V{sub N} vacancy-complexes formed in these samples and that the V{sub N}/V{sub Ga} ratio depended on the V/III ratio. The generation of Er-V{sub N} defect complexes, which act as high optical active luminescence centers, is suggested as the cause of improved optical properties of Er-doped GaN grown with a lower V/III ratio.

• OSTI ID: 21347261
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DOPED MATERIALS
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
EPITAXY
ERBIUM
FERMIONS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INTERACTIONS
LAYERS
LEPTONS
LUMINESCENCE
MATERIALS
MATTER
METALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
OPTICAL ACTIVITY
OPTICAL PROPERTIES
PARTICLE INTERACTIONS
PHOTOLUMINESCENCE
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
POSITRONS
RARE EARTHS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
VACANCIES