Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

Journal Article · Mon May 03 04:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3421535· OSTI ID:21347415

Shaoqiang, Chen; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro ^[1]; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi ^[2]

---

1. Institute of Applied Physics, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8573 (Japan)
2. Advanced Electronic Materials Center, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan)

Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

• OSTI ID: 21347415
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 96; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CATHODOLUMINESCENCE
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DOPED MATERIALS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
ERBIUM
EXCITATION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HYDRIDES
HYDROGEN COMPOUNDS
LUMINESCENCE
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
PHOTOLUMINESCENCE
PHOTON EMISSION
PNICTIDES
RARE EARTHS
SEMICONDUCTOR MATERIALS